Junction technology in SiC for high-voltage power devices

Abstract

In electric power conversion systems of power infrastructures, electric vehicles, and power supplies, Si-based power semiconductor devices are employed as a key hardware. Reduction of power dissipation in the conversion systems is strongly required for energy saving. In particular, ultrahigh-voltage power converters with high efficiency are essential to realize a stable and highly efficient electric power network by optimizing the use of solar power and wind-generated power in the future. The efficiency of power converters/inverters strongly relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties [1-3]. The major features of SiC power devices include high-voltage blocking capability, low on-state resistance, fast switching speed, and high-temperature operation.