Strained silicon nanowire array MOSFETs with high-k/metal gate stack

Abstract

This paper presents experimental results on metal oxide semiconductor field-effect transistors (MOSFETs) featuring an array of 1000 trigated uniaxially strained nanowires with a cross-sections of 15 × 15 nm² in combination with a HfO₂/TiN gate stack. The high uniaxial strain along the wires reduces the band gap energy by approximately 140 meV and enhances the electron mobility. Ideal inverse subthreshold slopes of n- and p-channel devices of 60 (62) mV/dec at room temperature and I_on/I_off ratios up to 10¹⁰ were obtained.