High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

Abstract

In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (RON,sp) of 0.89 mΩ·cm², a high maximum drain current (ID,max) of 4.1 kA/cm², a large Vth of 5.1 V and a breakdown voltage (VBR) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.