The impact of technology on power for high-speed electrical and optical interconnects

H. Cho, P. Kapur, K. Saraswat
{"title":"The impact of technology on power for high-speed electrical and optical interconnects","authors":"H. Cho, P. Kapur, K. Saraswat","doi":"10.1109/IITC.2005.1499970","DOIUrl":null,"url":null,"abstract":"The impact of technology scaling - in the form of transistor performance improvement and a higher demand in bit rate - on power dissipation of short distance electrical and optical interconnects is extensively quantified. We find that: 1) the transistor performance improvement has a similar impact on both types of interconnects, leaving critical length (length above which optical interconnects dissipate lower power) relatively unchanged; 2) the increase in bit rate significantly reduces critical length, favoring optics; 3) at the 32 nm technology node (and beyond) with its commensurate bandwidth requirement, optical interconnect becomes favorable for distances as low as 10 cm corresponding to inter-chip communication; 4) most critical factors in making optical interconnects favorable are reduction in coupling losses and optical detector capacitance.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"410 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

The impact of technology scaling - in the form of transistor performance improvement and a higher demand in bit rate - on power dissipation of short distance electrical and optical interconnects is extensively quantified. We find that: 1) the transistor performance improvement has a similar impact on both types of interconnects, leaving critical length (length above which optical interconnects dissipate lower power) relatively unchanged; 2) the increase in bit rate significantly reduces critical length, favoring optics; 3) at the 32 nm technology node (and beyond) with its commensurate bandwidth requirement, optical interconnect becomes favorable for distances as low as 10 cm corresponding to inter-chip communication; 4) most critical factors in making optical interconnects favorable are reduction in coupling losses and optical detector capacitance.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
技术对高速电光互连电源的影响
以晶体管性能改进和对比特率的更高要求为形式的技术缩放对短距离电和光互连的功耗的影响被广泛量化。我们发现:1)晶体管性能的提高对两种类型的互连具有相似的影响,使临界长度(超过该长度的光互连耗散较低的功率)相对不变;2)比特率的增加显著降低了临界长度,有利于光学;3)在32nm(及以上)技术节点,其带宽要求相当,光互连有利于低至10cm的芯片间通信距离;使光互连有利的最关键因素是减少耦合损耗和光检测器电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65 nm groundrules Characterization of flip chip microjoins up to 40 GHz using silicon carrier Reliability and conduction mechanism study on organic ultra low-k (k=2.2) for 65/45 nm hybrid Cu damascene technology Air gap integration for the 45nm node and beyond Membrane-mediated electropolishing of damascene copper
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1