L. Goux, K. Sankaran, G. Kar, N. Jossart, K. Opsomer, R. Degraeve, G. Pourtois, G. Rignanese, C. Detavernier, S. Clima, Y. Chen, A. Fantini, B. Govoreanu, D. Wouters, M. Jurczak, L. Altimime, J. Kittl
{"title":"Field-driven ultrafast sub-ns programming in W\\Al2O3\\Ti\\CuTe-based 1T1R CBRAM system","authors":"L. Goux, K. Sankaran, G. Kar, N. Jossart, K. Opsomer, R. Degraeve, G. Pourtois, G. Rignanese, C. Detavernier, S. Clima, Y. Chen, A. Fantini, B. Govoreanu, D. Wouters, M. Jurczak, L. Altimime, J. Kittl","doi":"10.1109/VLSIT.2012.6242465","DOIUrl":null,"url":null,"abstract":"We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3 electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu+ species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"38 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"45","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 45
Abstract
We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al2O3 electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu+ species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.
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