H. Kuriyama, S. Kiyama, T. Kuwahara, S. Noguchi, S. Nakano
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引用次数: 1
Abstract
Summary form only given. A SEM study after dry etching was conducted for poly-Si films recrystallized by excimer laser annealing. It was found that the grain size could be enlarged to about 300 nm using the low-temperature (400 degrees C) substrate heating method. The authors propose a low-temperature ( >
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