Resistive Switching Behavior of Solution-Processed AlOx, based RRAM with Ni and TiN Top Electrode at Low Annealing Temperatures

Abstract

Solution-processed AlOxthin film deposited under different annealing temperatures are used to develop metal/AlOx/Pt RRAM devices, with Ni and TiN as the top electrode (TE) to investigate the influence of metal electrode on device performances. In this work, RRAM devices with various performances exhibit typical bipolar resistive switching (RS) characteristics. The difference of work function between the TE and bottom electrode (BE) metals is considered to play a primary role in operation process. With smaller difference of work function, the devices indicate less power consumption and more stable on/off ratio for SET and RESET operations. The Ni/AlOx/Pt devices demonstrate more stable performance with lower SET and RESET operation voltages (<1.3 V), larger on/off ratio (>103), longer retention time (>104 s) and better endurance(>100 cycle).