{"title":"A versatile monolithic RF amplifier using a dielectrically isolated monolithic microwave integrated circuit (DIMMIC)","authors":"P. Bachert, M. McCombs, P. Sanders","doi":"10.1109/BIPOL.1988.51090","DOIUrl":null,"url":null,"abstract":"A new RF integrated-circuit technology is described that overcomes the drawbacks of currently available integrated processes. This DIMMIC technology draws its advantage from its dielectric isolation, which minimizes parasitic substrate capacitance, and from its lack of increased collector resistance. Using this technology, a medium-power RF amplifier was built that reduced parts count and size significantly over its discrete counterpart without sacrificing performance.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"50 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new RF integrated-circuit technology is described that overcomes the drawbacks of currently available integrated processes. This DIMMIC technology draws its advantage from its dielectric isolation, which minimizes parasitic substrate capacitance, and from its lack of increased collector resistance. Using this technology, a medium-power RF amplifier was built that reduced parts count and size significantly over its discrete counterpart without sacrificing performance.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
