G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura
{"title":"Mechanism of off-leakage current in InGaZnO thin-film transistors","authors":"G. Wakimura, Y. Yamauchi, T. Matsuoka, Y. Kamakura","doi":"10.1109/IMFEDK.2014.6867062","DOIUrl":null,"url":null,"abstract":"We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.","PeriodicalId":202416,"journal":{"name":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2014.6867062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We investigate the mechanism of off-leakage current in InGaZnO thin-film transistors using a two dimensional device simulator. In order to reproduce the magnitude of experimental data, deep donor-like trap states probably originating from the oxygen vacancies are introduced in IGZO channel, which significantly affect the off-leakage current. It is shown that the pinning effect of the channel potential causes the plateau behavior of Id-Vg characteristics in off-state region, depending on the amount and depth of the deep states.
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