{"title":"Estimation of minority carrier diffusion lengths in InP/GaAs solar cells","authors":"R. Jain, D. Flood","doi":"10.1109/ICIPRM.1990.203061","DOIUrl":null,"url":null,"abstract":"An attempt is made to estimate the minority carrier diffusion lengths in the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the measured cell results obtained under AM0-spectrum at 25 degrees C. A 16-nm hole diffusion length in the emitter and a 0.42- mu m electron diffusion length in the base gave good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short-circuit current, open-circuit voltage, and efficiency was studied. It was also observed that the front surface recombination velocity has very little influence on the cell performance. Cell efficiency as a function of dislocation density was calculated, and the effect of improved emitter bulk properties on cell efficiency is presented.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
An attempt is made to estimate the minority carrier diffusion lengths in the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the measured cell results obtained under AM0-spectrum at 25 degrees C. A 16-nm hole diffusion length in the emitter and a 0.42- mu m electron diffusion length in the base gave good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short-circuit current, open-circuit voltage, and efficiency was studied. It was also observed that the front surface recombination velocity has very little influence on the cell performance. Cell efficiency as a function of dislocation density was calculated, and the effect of improved emitter bulk properties on cell efficiency is presented.<>
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