A.V. Gelatos, B. Nguyen, K. Perry, R. Marsh, J. Peschke, S. Filipiak, E. Travis, N. Bhat, L. La, M. Thompson, T. Saaranen, P. Tobin
{"title":"Copper integration into 0.5 /spl mu/m BiCMOS technology","authors":"A.V. Gelatos, B. Nguyen, K. Perry, R. Marsh, J. Peschke, S. Filipiak, E. Travis, N. Bhat, L. La, M. Thompson, T. Saaranen, P. Tobin","doi":"10.1109/VLSIT.1995.520842","DOIUrl":null,"url":null,"abstract":"The report describes the integration of copper into the backend of a two-level metal 0.5 /spl mu/m BiCMOS SRAM circuit. The circuit is used to evaluate the impact of copper on the device characteristics. The results of time dependent gate dielectric breakdown, gate oxide interface state generation, temperature dependent reverse diode leakage, and hot carrier injection are used to demonstrate that, under standard backend processing conditions, copper does not degrade device performance.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"141 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The report describes the integration of copper into the backend of a two-level metal 0.5 /spl mu/m BiCMOS SRAM circuit. The circuit is used to evaluate the impact of copper on the device characteristics. The results of time dependent gate dielectric breakdown, gate oxide interface state generation, temperature dependent reverse diode leakage, and hot carrier injection are used to demonstrate that, under standard backend processing conditions, copper does not degrade device performance.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
