{"title":"The Simplest Stacked BST Capacitor For The Future DRAMs Using A Novel Low Temperature Growth Enhanced Crystallization","authors":"Takehiro, Yamauchi, Yoshimaru, Onoda","doi":"10.1109/VLSIT.1997.623744","DOIUrl":null,"url":null,"abstract":"The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [ 11 was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The simplest stacked capacitor with BST thinner films (about 50nm-thick) grown by a novel low temperature growth [ 11 was demonstrated. The storage node without sidewall spacer was constructed by thinner Ru-layer, sputtered-TiN diffusion barrier, TiSix electrical contact layer and poly-Si plug. The low temperature BST growth prevented the leakage current increase of BST films as thin as 25nm. Therefore, 50% step coverage BST-capacitor was performed as sidewall-less simple stacked capacitors with large storage charge.
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