J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay
{"title":"Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model","authors":"J. Marcon, S. Koumetz, K. Ketata, M. Ketata, P. Launay","doi":"10.1109/SIM.1996.570937","DOIUrl":null,"url":null,"abstract":"Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, two models have been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.
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