Photosensitive phosphorus-doped boron-codoped silica planar waveguide for waveguide Bragg grating prepared by spin coating

M.S.A. Rahman, S. Shaari
{"title":"Photosensitive phosphorus-doped boron-codoped silica planar waveguide for waveguide Bragg grating prepared by spin coating","authors":"M.S.A. Rahman, S. Shaari","doi":"10.1109/SMELEC.2002.1217863","DOIUrl":null,"url":null,"abstract":"Phosphorous doped silica layers are grown from tetraethylorthosilicate (TEOS), phosphoric acid and PBF polymer, with spin coating technique on silica glass. The phosphorus-doped and boron-codoped photosensitive silica waveguide samples show index modulation around 1/spl times/10/sup -4/ for thickness between 3 /spl mu/m to 8 /spl mu/m. The refractive index range is between 1.51 to 1.54 which is dependent on the coating parameters and concentration of phosphoric acid. Photosensitivity test and treatment are performed using a 366 nm UV source, with 0.36 mW/cm/sup 2/ power at pulse rate of 50 Hz. All samples show a decrease in refractive indices under the UV exposure. They begin to saturate after first 30-60 minutes in treatment. Further UV exposure will slowly increase again the refractive index. It is estimated that, with a laser source power from ArF and KrF of about 10 mW, the Bragg grating writing duration will be in between 20 to 30 second. The samples were also thermally treated to increase the index modulation by the factor of 10.","PeriodicalId":211819,"journal":{"name":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICONIP '02. Proceedings of the 9th International Conference on Neural Information Processing. Computational Intelligence for the E-Age (IEEE Cat. No.02EX575)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2002.1217863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Phosphorous doped silica layers are grown from tetraethylorthosilicate (TEOS), phosphoric acid and PBF polymer, with spin coating technique on silica glass. The phosphorus-doped and boron-codoped photosensitive silica waveguide samples show index modulation around 1/spl times/10/sup -4/ for thickness between 3 /spl mu/m to 8 /spl mu/m. The refractive index range is between 1.51 to 1.54 which is dependent on the coating parameters and concentration of phosphoric acid. Photosensitivity test and treatment are performed using a 366 nm UV source, with 0.36 mW/cm/sup 2/ power at pulse rate of 50 Hz. All samples show a decrease in refractive indices under the UV exposure. They begin to saturate after first 30-60 minutes in treatment. Further UV exposure will slowly increase again the refractive index. It is estimated that, with a laser source power from ArF and KrF of about 10 mW, the Bragg grating writing duration will be in between 20 to 30 second. The samples were also thermally treated to increase the index modulation by the factor of 10.
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自旋镀膜制备用于波导布拉格光栅的光敏掺磷硼-共掺二氧化硅平面波导
以四乙基硅酸盐(TEOS)、磷酸和PBF聚合物为原料,采用自旋镀膜技术在二氧化硅玻璃上生长出掺磷二氧化硅层。掺磷和共掺硼的光敏硅波导样品显示,当厚度在3 /spl mu/m到8 /spl mu/m之间时,折射率调制约为1/spl倍/10/sup -4/。折射率变化范围在1.51 ~ 1.54之间,与涂层参数和磷酸浓度有关。光敏性测试和处理使用366nm紫外光源,脉冲速率为50hz,功率为0.36 mW/cm/sup 2/。在紫外线照射下,所有样品的折射率都下降。在治疗的第一个30-60分钟后,它们开始饱和。进一步的紫外线照射将再次缓慢地增加折射率。据估计,当ArF和KrF的激光源功率约为10 mW时,布拉格光栅写入时间将在20 ~ 30秒之间。还对样品进行了热处理,使折射率调制增加了10倍。
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