M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu
{"title":"Room temperature bonding of InGaAs wafers using thin Ge films","authors":"M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu","doi":"10.23919/LTB-3D.2017.7947446","DOIUrl":null,"url":null,"abstract":"Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.
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