{"title":"Gas cluster ion beam irradiation for wafer bonding","authors":"N. Toyoda, Tomoya Sasaki, S. Ikeda, I. Yamada","doi":"10.23919/LTB-3D.2017.7947401","DOIUrl":null,"url":null,"abstract":"Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.","PeriodicalId":183993,"journal":{"name":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/LTB-3D.2017.7947401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Preliminary experiments of gas cluster ion beam (GCIB) irradiation for wafer bonding were conducted. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, will be beneficial for surface activated bonding. From XPS, AFM measurements, Ar-GCIB irradiation at oblique incidence removed native oxide on Cu films efficiently without roughening. Cu-Cu bond increased with the acceleration voltage of Ar-GCIB. There is a correlation between the bond strength and the contact angle reduction due to surface smoothing and oxide removal by Ar-GCIB.
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