Evaluation of Amount of Heat Through Each Component of SiC Package Using CFD Analysis

Abstract

This paper describes the evaluation of amount of heat from the semiconductor die, which is a boundary condition for Electro-Thermal Analysis to evaluate the micro scale hot spots in power SiC MOSFET. Electro-Thermal Analysis is a method for identifying the nano or micro scale hot spots of semiconductor devices. In our previous study, the adiabatic boundary condition between the semiconductor die and the mold resin was employed in the Electro-Thermal Analysis. However, it is necessary to discuss whether heat dissipation from the semiconductor die to the mold resin should be considered. In this study, we discuss the validity of the adiabatic boundary condition between the semiconductor die and the mold resin using CFD analysis.