A Comparator Speed Enhancement Technique for Near- and Sub-Threshold ADCs

Bojun Hu, Sanfeng Zhang, Xiong Zhou, Zehao Li, Xiangxin Pan, Zhaoming Ding, Qiang Li
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Abstract

This paper presents a comparator speed enhancement technique for successive approximation register (SAR) analog-to-digital converter (ADC) under near- and sub-threshold supply voltages. The proposed delayed cross-coupling comparator effectively improves the speed of the comparator while maintaining a good noise performance. This work has been proved by a 350mV 8bit 12MS/s SAR ADC designed in a 65nm CMOS technology. The post-layout simulation shows that the ADC achieves SNDR of 48.83dB and SFDR of 63.72dB. The overall power consumption is $6.71\mu \mathrm{W}$, resulting in a figure-of-merit (FoM) of 2.47 fJ/convertion-step. The simulation results present that the proposed comparator speed enhancement technique significantly improves the sampling rate of the ADC under near- and sub-threshold supply voltages.
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近阈值和亚阈值adc的比较器速度增强技术
提出了一种用于近阈值和亚阈值电压下逐次逼近寄存器(SAR)模数转换器(ADC)的比较器速度增强技术。所提出的延迟交叉耦合比较器在保持良好噪声性能的同时,有效地提高了比较器的速度。该工作已通过采用65nm CMOS技术设计的350mV 8bit 12MS/s SAR ADC得到验证。布局后仿真结果表明,该ADC的SNDR为48.83dB, SFDR为63.72dB。总功耗为$6.71\mu \mathrm{W}$,从而产生2.47 fJ/转换步的性能值(FoM)。仿真结果表明,所提出的比较器速度增强技术显著提高了ADC在近阈值和亚阈值电压下的采样率。
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