T. Matsuda, M. Kawabe, K. Nishihara, H. Iwata, S. Iwatsubo, T. Ohzone
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引用次数: 5
Abstract
In this work, we demonstrate blue electroluminescence (EL) from Au/SiO/sub 2//p-Si MOS capacitor with Si implanted SiO/sub 2/. The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The EL spectra have been successfully analysed by Gaussian distributions, and the EL mechanism is discussed. Gate current (J/sub G/) versus gate voltage (V/sub G/) characteristics under accumulation conditions was analysed. Blue EL spectra was observed and the measured data are successfully fitted by the Gaussian curves for EL mechanism analysis.
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