L. Orlov, V. A. Tolomasov, A. Potapov, Y. Drozdov, V. Vdovin
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引用次数: 1
Abstract
We applied GeH/sub 4/-Si MBE for growing Ge-Si/sub 1-x/Ge/sub x/ superlattices on Si(100). We investigated the distribution and the structure of defects inside heteroepitaxial Si/sub 1-x/Ge/sub x/ layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer.
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