Wafer applied and no flow underfill screening for 3D stacks

K. Rebibis, C. Gerets, G. Capuz, R. Daily, T. Wang, A. Lamanna, F. Duval, A. Miller, R. Guino, R. Peddi, E. Beyne, B. Swinnen
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引用次数: 7

Abstract

As the demand for 3D packaging increases, selecting reliable and cost effective materials to be used to build these complex packages has gained a lot of importance. As current IC technology nodes are becoming “Moore-than-Moore” challenging, thus industry and research institutes alike are trying to find ways of addressing this challenge. The integration of new types of underfill materials in 3D stacking is one very important part of the package material set that will determine its reliability and cost effectiveness. With the introduction of 3D technology, bump sizes and pitches have been scaled down significantly which in turn has also shrank underfill gaps between dies which complicates the assembly of 3D stacks. The need of new underfill materials and underfilling concepts becomes inevitable. It is quite difficult to make traditional capillary type underfills and underfilling methods to work due to the very narrow gaps and fine bump pitches that 3D stacks have. Pre-applied underfills (Wafer Applied or No Flow) with or without fillers (submicron or Nano-fillers) may prove to be a suitable solution for this concern. Using a 2 die-stack test vehicle with a bump pitch of 40 μm (with Cu and Cu/Sn bumps) and an underfill gap of 13.5 μm, four (4) different underfill materials (2 NUFs and 2 WAUFs) were screened. This paper will report on the assessment done for both wafer applied and no flow underfill materials, the differences in the application process, the material's filling and stacking process capabilities and finally the reliability of the 3D stacks. The materials were initially screened based on the test vehicle geometry then processed thru the different phases of the screening process. The changes in thermo-compression bonding parameters used in the experiment to improve the electrical yields will also be discussed. It will also be shown how underfill materials with and without fillers differ in the thermo-compression bonding force required to be able to get good bump-to-bump connection.
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采用硅片,无流动的3D堆底填料筛分
随着对3D封装需求的增加,选择可靠且具有成本效益的材料来构建这些复杂的封装变得非常重要。由于当前的集成电路技术节点正变得“摩尔比摩尔”具有挑战性,因此工业界和研究机构都在努力寻找解决这一挑战的方法。新型底填材料在三维堆垛中的集成是封装材料组合的重要组成部分,它将决定封装材料的可靠性和成本效益。随着3D技术的引入,凸点尺寸和间距已经大大缩小,这反过来也缩小了凹模之间的填充间隙,从而使3D堆栈的组装复杂化。对新型底填材料和底填概念的需求成为必然。由于3D叠层具有非常窄的间隙和精细的凹凸间距,传统的毛细管式底填和底填方法很难发挥作用。预填底(硅片填充或无流)有或没有填料(亚微米或纳米填料)可能是解决这一问题的合适方案。采用凸距为40 μm (Cu和Cu/Sn凸距)、底填间隙为13.5 μm的2模堆试验车,筛选了4种不同的底填材料(2种nuf和2种wauf)。本文将报告对应用硅片和无流底填材料的评估,应用过程的差异,材料的填充和堆叠工艺能力,最后是3D堆栈的可靠性。材料最初根据测试车辆的几何形状进行筛选,然后通过筛选过程的不同阶段进行处理。本文还将讨论在实验中改变热压键合参数以提高电产率的方法。它还将显示带填料和不带填料的底填材料在能够获得良好的凹凸连接所需的热压缩粘结力方面的差异。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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