Y. Ohno, H. Yoshida, S. Takeda, L. Jianbo, N. Shigekawa
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引用次数: 3
Abstract
Si/GaAs interfaces fabricated by surface-activated bonding at room temperature were examined by plane-view transmission electron microscopy. It was hypothesized that the interface resistance would be originated from surface defects on the Si and GaAs substrates introduced during the bonding process.
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