A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology

T. Johansen, M. Hossain, S. Boppel, R. Doerner, V. Krozer, W. Heinrich
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引用次数: 2

Abstract

This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is based on a balanced topology with Marchand balun at the input and rat-race hybrid coupler at the output. Reflector networks are employed to enhanced the third harmonic response. The measured third harmonic output power is -2.4dBm at 267 GHz and -6.2 dBm at 303 GHz. The second harmonic leakage remains 10 dB lower than the third harmonic power over this bandwidth. The DC power consumption of the active tripler is only 37.6 mW at 303 GHz leading to a DC conversion efficiency of 0.64%.
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一种基于转移基板的300 GHz有源三倍频器
提出了一种采用InP双异质结双极晶体管(DHBT)转移衬底(TS)技术实现的单片集成有源三频器。有源三倍器基于平衡拓扑,输入端为马尔尚平衡器,输出端为大鼠竞赛混合耦合器。采用反射网络增强三次谐波响应。测量到的三次谐波输出功率在267 GHz时为-2.4dBm,在303 GHz时为-6.2 dBm。在此带宽范围内,二次谐波泄漏比三次谐波功率低10db。有源三倍器在303 GHz时的直流功耗仅为37.6 mW,直流转换效率为0.64%。
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