Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)

Chun-Yuan Chen, C. Uang, S. Cheng, H. Chuang, S. Fu, Ching-Hsiu Tsai, Chi-Yuan Chang, Wen-Chau Liu
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Abstract

The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.
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InP/InGaAs隧穿发射极双极晶体管(TEBT)的特性
研究并验证了一种新型的InP/InGaAs隧穿发射极双极晶体管(TEBT)的直流性能。所研究的装置可以在大于11十年量级(10/sup -12/至10/sup -1/A)的极宽集电极电流范围下工作。即使在超低集电极电流为3.9 /spl倍/ 10/sup -12/A (1.56 /spl倍/ 10/sup -7/ A/cm/sup 2/)的情况下,也能获得3的电流增益。所研究器件的共发射极击穿电压和共基极击穿电压分别高于2和5V。此外,还发现极低的集电极-发射极偏置电压为40mV。测量和研究了TEBT随温度变化的直流特性。因此,基于实验结果,所研究的器件为低功耗电子应用提供了希望。
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