Chun-Yuan Chen, C. Uang, S. Cheng, H. Chuang, S. Fu, Ching-Hsiu Tsai, Chi-Yuan Chang, Wen-Chau Liu
{"title":"Characteristics of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)","authors":"Chun-Yuan Chen, C. Uang, S. Cheng, H. Chuang, S. Fu, Ching-Hsiu Tsai, Chi-Yuan Chang, Wen-Chau Liu","doi":"10.1109/IWJT.2004.1306799","DOIUrl":null,"url":null,"abstract":"The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The DC performances of a novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even operated at an ultra-low collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5V, respectively. Furthermore, a very low collector-emitter offset voltage of 40mV is found. The temperature-dependent DC characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications.