Microscopic modeling of high frequency noise in SiGe HBTs

M. Ramonas, P. Sakalas, C. Jungemann, M. Schroter, W. Kraus, A. Shimukovitch
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引用次数: 4

Abstract

The SIMS doping profile of SiGe heterojunction bipolar transistor is calibrated for best agreement of the hydrodynamic model results with the experiment. DC and small-signal data is used for the calibration. The terminal current noise calculations are performed using both hydrodynamic and drift-diffusion models with the calibrated doping profile. The calculation results are compared with the experimental values. Overall good agreement for the minimum noise figure, the noise resistance, and the optimum reflection coefficient is obtained. The difference between the hydrodynamic and drift-diffusion model results is analyzed using spectral intensities of the base and collector current fluctuations.
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SiGe HBTs高频噪声的微观模拟
对SiGe异质结双极晶体管的SIMS掺杂谱进行了校准,以使流体力学模型结果与实验结果最吻合。使用直流和小信号数据进行校准。终端电流噪声的计算是使用水动力和漂移-扩散模型与校准的掺杂剖面。计算结果与实验值进行了比较。获得了最小噪声系数、抗噪声性能和最佳反射系数的总体一致性。利用基极和集电极电流波动的频谱强度分析了流体动力模型和漂移扩散模型结果的差异。
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