The field effect diode

F. Taghibakhsh
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Abstract

The fabrication of field effect diode (FED) as a planar pin diode with two gates over its intrinsic region using SOI technology is presented in this paper. The voltage applied to the gates, changes the barrier height against carriers and therefore modulates diode current. Based on an accurate numeric simulation, the operation of the device has been explained, the analytical I-V relationship has been extracted, dynamic characteristics of the device has been calculated and the effect of device parameters on its electrical behavior has been studied. Obtained results show that the FED realizes a voltage controlled voltage source.
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场效应二极管
本文介绍了一种利用SOI技术在其本质区上制造具有两个栅极的平面场效应二极管(FED)的方法。施加到栅极的电压改变了对载流子的势垒高度,因此调制了二极管电流。在精确数值模拟的基础上,解释了器件的工作原理,提取了解析式I-V关系,计算了器件的动态特性,研究了器件参数对其电学行为的影响。实验结果表明,该滤波器实现了电压控制电压源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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