Z. Fang, D. Look, S. Kuisma, K. Saarinen, P. Hautojarvi
{"title":"Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies","authors":"Z. Fang, D. Look, S. Kuisma, K. Saarinen, P. Hautojarvi","doi":"10.1109/SIM.1996.570928","DOIUrl":null,"url":null,"abstract":"Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze and high- and low-pressure liquid encapsulated Czochralski techniques have been studied by positron annihilation (PAS) and thermally stimulated current (TSC) spectroscopies, respectively. We find good correlations between the concentrations of the TSC traps T/sub 2/ (0.63 eV) and T/sub 5/ (0.35 eV), and the PAS identified-defects As/sub Ga/ and V/sub As/, respectively. A good correlation between the concentration of intrinsic acceptors (V/sub Ga/ and Ga/sub As/) measured by PAS, and the total acceptor concentration measured by infrared absorption, is also found.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"184 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570928","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze and high- and low-pressure liquid encapsulated Czochralski techniques have been studied by positron annihilation (PAS) and thermally stimulated current (TSC) spectroscopies, respectively. We find good correlations between the concentrations of the TSC traps T/sub 2/ (0.63 eV) and T/sub 5/ (0.35 eV), and the PAS identified-defects As/sub Ga/ and V/sub As/, respectively. A good correlation between the concentration of intrinsic acceptors (V/sub Ga/ and Ga/sub As/) measured by PAS, and the total acceptor concentration measured by infrared absorption, is also found.
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