{"title":"Breakthrough to the \"Silicon limit\" of power devices","authors":"Xingbi Chen","doi":"10.1109/ICSICT.1998.785827","DOIUrl":null,"url":null,"abstract":"The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The results of some new developments in voltage sustaining structures for both vertical and lateral power devices are presented. A figure of merit is defined for characterising the devices, show that they are far superior to those of prior art.
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