A PELOX isolated sub-0.5 micron thin-film SOI technology

Abstract

The integration of Poly-Encapsulated LOCOS (PELOX) into a high performance sub-0.5 /spl mu/m thin-film SOI technology is described. The 700 /spl Aring/ (per side) bird's beak encroachment of PELOX eliminates the need for a field implant and results in a significant reduction of the MOSFET narrow width effect. Partially-depleted N+/P+ dual poly gate MOSFET's with 70 /spl Aring/ Tox and 0.35 /spl mu/m Lpoly were fabricated with /spl les/1 /spl mu/m active/isolation pitch. A 40% reduction in power-delay product, compared to bulk CMOS, is achieved with a CMOS ring oscillator propagation-delay of 51 psec at 2 V supply voltage.