{"title":"Scanning Frequency Comb Microscopy (SFCM) Shows Promise for Carrier Profiling at and Below the 7-nm Node","authors":"M. Hagmann, J. Wiedemeier","doi":"10.1109/ASMC.2019.8791772","DOIUrl":null,"url":null,"abstract":"A new type of scanning probe microscopy is described showing promise for true sub-nanometer resolution in carrier profiling which is essential in failure analysis at and below the 7-nm technology node. The sample resistivity is determined by measuring the attenuation of low-noise attowatt microwave signals generated in a tunneling junction by optical rectification.","PeriodicalId":287541,"journal":{"name":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.2019.8791772","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new type of scanning probe microscopy is described showing promise for true sub-nanometer resolution in carrier profiling which is essential in failure analysis at and below the 7-nm technology node. The sample resistivity is determined by measuring the attenuation of low-noise attowatt microwave signals generated in a tunneling junction by optical rectification.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
