P. Gouker, B. Tyrrell, P. Wyatt, E. Austin, A. Soares, C.K. Chen, J. Burns
{"title":"Total dose performance of conventional static and dynamic circuits in a radhard 0.18-/spl mu/m FDSOI process","authors":"P. Gouker, B. Tyrrell, P. Wyatt, E. Austin, A. Soares, C.K. Chen, J. Burns","doi":"10.1109/SOI.2005.1563582","DOIUrl":null,"url":null,"abstract":"Static and dynamic circuits were fabricated in the MIT-LL 0.18-/spl mu/m FDSOI CMOS process, and exhibited a high tolerance to total dose radiation up to 1 Mrad (SiO/sub 2/). Circuits were designed using conventional design rules and layout techniques, i.e., they are not radhard-by-design. Hardening was done at the circuit fabrication level using process enhancements. These are the first circuit-level hardness results reported to date for these new enhancements.","PeriodicalId":116606,"journal":{"name":"2005 IEEE International SOI Conference Proceedings","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2005.1563582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Static and dynamic circuits were fabricated in the MIT-LL 0.18-/spl mu/m FDSOI CMOS process, and exhibited a high tolerance to total dose radiation up to 1 Mrad (SiO/sub 2/). Circuits were designed using conventional design rules and layout techniques, i.e., they are not radhard-by-design. Hardening was done at the circuit fabrication level using process enhancements. These are the first circuit-level hardness results reported to date for these new enhancements.
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