Li Qi, Luo Le, Li Haiou, L. Shiwei, Zhang Fabi, Yang Nianjiong
{"title":"A new modulating electric field structure with homo-type fixed interface charges","authors":"Li Qi, Luo Le, Li Haiou, L. Shiwei, Zhang Fabi, Yang Nianjiong","doi":"10.1109/ICAM.2017.8242168","DOIUrl":null,"url":null,"abstract":"In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical results indicate that the breakdown voltage of device proposed is increased by 40% and the on-resistance reduced by 44% in comparison to that of the conventional LDMOS.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a new LDMOS on silicon-on-insulator (SOI) with homo-type fixed interface charges in the bottom of field oxide layer is proposed. The surface electric field can be improved by adding the fixed interface charges and optimizing the doping profile, which can effectively modulate electric field to obtain the optimization trade-off between the breakdown voltage and on-resistance. The numerical results indicate that the breakdown voltage of device proposed is increased by 40% and the on-resistance reduced by 44% in comparison to that of the conventional LDMOS.
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