Effect of growth parameters on conducting CaxTayO3-δ/SrTiO3 interface

Abstract

Abstract In search of novel conducting oxide heterointerfaces, we previously uncovered an distinctive quasi two-dimensional electron gas (q-2DEG) type behaviour in non-stoichimetric Ca x Ta y O 3-δ /SrTiO 3 heterostructure. However, the underlying mechanism remained enigmatic. In this study, we delve into the intricate interplay of growth conditions, stoichiometry, and transport properties of these heterostructures. Using (Ca 0.5 TaO 3 ) 2 Target and the pulsed laser deposition technique, we grow the epitaxial thin films while systematically varying growth parameters, inculding laser energy density, oxygen pressures, and post-deposition annealing. Structural analysis unveiled a notable presence of oxygen vacancies in the as-grown films, while annealed samples exhibited an oxygen surplus. Building upon these findings, our comprehensive charge transport measurements revealed that while oxygen vacancies do contribute to conductivity, the polar catastrophe model takes precedence as the primary source of interfacial conductance in these heterostructures. This study provides valueable insights into the behavior of these innovative heterostructures, paving the way for future advancements in the field.