Anomalous Hall effect in naturally oxidized normal-metal Al/Cu double films

Abstract

Abstract An unexpectedly larger current-induced spin–orbit torque in oxidized Cu (CuO x )/ferromagnet (FM) than heavy-metal/FM has recently attracted intense attention in spintronic studies. Although the two mechanisms, interfacial Rashba Edelstein effect and spin-vorticity coupling, have been put forward based on the two different conductive features of CuO x , i.e. electrical insulator and gradient of electrical mobility, the detailed investigation of transport of CuO x is still lacking. Here we experimentally report the positive and negative anomalous Hall effect (AHE) in naturally oxidized normal-metal Al/Cu double films. We found that the onset temperature of AHE corresponds to magnetic transition temperature of CuO x . Furthermore, by comparing Hall resistance of the crystalline and amorphous Cu/Al double films, we identify that the positive anomalous Hall resistance attributes to magnetic moment of CuO x itself, while the negative anomalous Hall resistance can originate from the spin or orbital currents generated at the CuO x /AlO x interface interact with magnetization of CuO x and its inverse process.