Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI:10.15407/spqeo26.03.352
V. A. Shneidman
{"title":"Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274","authors":"V. A. Shneidman","doi":"10.15407/spqeo26.03.352","DOIUrl":null,"url":null,"abstract":"I clarify the reasons for the observed discrepancy between the numerical simulations of noise induced escape in a quartic potential by Soskin et al., and the weak noise matched asymptotic solution (MAS) of the time dependent Smoluchowski equation obtained earlier [V. Shneidman, Phys. Rev. E56, 5257 (1997)]. A minor typo – sign of a constant – is corrected and the MAS is also extended beyond the top of the barrier into the second well. Once numerics is performed for a higher barrier, the correspondence with analytics is restored.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"68 1","pages":"0"},"PeriodicalIF":1.1000,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Physics Quantum Electronics & Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.03.352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"QUANTUM SCIENCE & TECHNOLOGY","Score":null,"Total":0}
引用次数: 0

Abstract

I clarify the reasons for the observed discrepancy between the numerical simulations of noise induced escape in a quartic potential by Soskin et al., and the weak noise matched asymptotic solution (MAS) of the time dependent Smoluchowski equation obtained earlier [V. Shneidman, Phys. Rev. E56, 5257 (1997)]. A minor typo – sign of a constant – is corrected and the MAS is also extended beyond the top of the barrier into the second well. Once numerics is performed for a higher barrier, the correspondence with analytics is restored.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
对Soskin et al.《过阻尼系统中噪声诱发逃逸和跃迁的短时动力学》的评论,半导体物理,量子电子&光电子学,2022年。25、No . 3p . 262 - 274
本文阐明了Soskin等人在四次电位中噪声诱发逃逸的数值模拟与先前获得的时间相关Smoluchowski方程的弱噪声匹配渐近解(MAS)之间存在差异的原因[V]。Shneidman、phy。[j].中华医学杂志,1997,17(5)。一个小的输入错误——一个常数的符号——被纠正,MAS也延伸到屏障顶部以外的第二口井。一旦对更高的障碍执行了数值,就恢复了与分析的对应关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
期刊最新文献
SPR chromatic sensor with colorimetric registration for detection of gas molecules Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC Preparation and ionic conductivity of Ag8GeS6-based ceramic materials Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1