The samples ZnO:Mn were prepared using the conventional solid-state technique. To dope them with manganese, we used water solutions of MnSO4 and MnCl2. The properties inherent to both types of the obtained ceramics have been compared. It was found that the former demonstrated nonlinear current-voltage characteristics, whereas those of the latter were, in fact, linear. The analysis of EPR, diffuse reflectance and Raman spectra obtained for prepared ceramics allowed concluding that, in the samples doped with MnSO4, formation of Mn-related phase, namely, ZnMn2O4 spinel occurred at ZnO grain boundaries under sintering. It has been ascertained that a thin layer of this substance separates adjacent ZnO grains, which provides appearance of the back-to-back Schottky barriers at grain boundaries and “varistor behavior” of current-voltage characteristics.
{"title":"Role of ZnMn2O4 phase in formation of varistor characteristics in ZnO:Mn ceramics","authors":"I.V. Markevich, T.R. Stara, I.P. Vorona, O.F. Isaieva, Ye.G. Gule, O.V. Melnichuk, L.Yu. Khomenkova","doi":"10.15407/spqeo26.03.255","DOIUrl":"https://doi.org/10.15407/spqeo26.03.255","url":null,"abstract":"The samples ZnO:Mn were prepared using the conventional solid-state technique. To dope them with manganese, we used water solutions of MnSO4 and MnCl2. The properties inherent to both types of the obtained ceramics have been compared. It was found that the former demonstrated nonlinear current-voltage characteristics, whereas those of the latter were, in fact, linear. The analysis of EPR, diffuse reflectance and Raman spectra obtained for prepared ceramics allowed concluding that, in the samples doped with MnSO4, formation of Mn-related phase, namely, ZnMn2O4 spinel occurred at ZnO grain boundaries under sintering. It has been ascertained that a thin layer of this substance separates adjacent ZnO grains, which provides appearance of the back-to-back Schottky barriers at grain boundaries and “varistor behavior” of current-voltage characteristics.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The absorbing layer thickness is a crucial parameter that significantly impacts the performance of perovskite solar cells (PSCs). In this study, we investigated the influence of the thickness of absorbing layer on the performance of silver-doped NaZnBr3 perovskite solar cells using the one-dimensional solar cell capacitance simulator (SCAPS-1D) software. The absorbing layer thickness was varied in the range of 0.1 to 1.3 µm. The initial solar cell after simulation gave an open-circuit voltage (Voc) of 1.174 V, short circuit current density (Jsc) of 14.012 mA/cm2, fill factor (FF) of 79.649%, and the power conversion efficiency (PCE) of 13.101%. For the optimized thickness of the perovskite layer of 1.0 µm, the following solar cell characteristics were obtained: Voc = 1.197 V, Jsc = 18.184 mA·cm–2, FF = 79.110%, and PCE = 17.215%. A 31% and 30% increase of the PCE and Jsc, respectively, was observed for the optimized device parameters as compared to the initial ones. Such finding confirms the premise for excellent photon management and enhancement of PSCs performance by selecting the thickness of absorbing layer.
{"title":"Influence of perovskite thickness on the performance of silver-doped NaZnBr3 perovskite solar cells using SCAPS software","authors":"M.O. Abdulmalik, E. Danladi","doi":"10.15407/spqeo26.03.321","DOIUrl":"https://doi.org/10.15407/spqeo26.03.321","url":null,"abstract":"The absorbing layer thickness is a crucial parameter that significantly impacts the performance of perovskite solar cells (PSCs). In this study, we investigated the influence of the thickness of absorbing layer on the performance of silver-doped NaZnBr3 perovskite solar cells using the one-dimensional solar cell capacitance simulator (SCAPS-1D) software. The absorbing layer thickness was varied in the range of 0.1 to 1.3 µm. The initial solar cell after simulation gave an open-circuit voltage (Voc) of 1.174 V, short circuit current density (Jsc) of 14.012 mA/cm2, fill factor (FF) of 79.649%, and the power conversion efficiency (PCE) of 13.101%. For the optimized thickness of the perovskite layer of 1.0 µm, the following solar cell characteristics were obtained: Voc = 1.197 V, Jsc = 18.184 mA·cm–2, FF = 79.110%, and PCE = 17.215%. A 31% and 30% increase of the PCE and Jsc, respectively, was observed for the optimized device parameters as compared to the initial ones. Such finding confirms the premise for excellent photon management and enhancement of PSCs performance by selecting the thickness of absorbing layer.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I clarify the reasons for the observed discrepancy between the numerical simulations of noise induced escape in a quartic potential by Soskin et al., and the weak noise matched asymptotic solution (MAS) of the time dependent Smoluchowski equation obtained earlier [V. Shneidman, Phys. Rev. E56, 5257 (1997)]. A minor typo – sign of a constant – is corrected and the MAS is also extended beyond the top of the barrier into the second well. Once numerics is performed for a higher barrier, the correspondence with analytics is restored.
{"title":"Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274","authors":"V. A. Shneidman","doi":"10.15407/spqeo26.03.352","DOIUrl":"https://doi.org/10.15407/spqeo26.03.352","url":null,"abstract":"I clarify the reasons for the observed discrepancy between the numerical simulations of noise induced escape in a quartic potential by Soskin et al., and the weak noise matched asymptotic solution (MAS) of the time dependent Smoluchowski equation obtained earlier [V. Shneidman, Phys. Rev. E56, 5257 (1997)]. A minor typo – sign of a constant – is corrected and the MAS is also extended beyond the top of the barrier into the second well. Once numerics is performed for a higher barrier, the correspondence with analytics is restored.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A.I. Pogodin, M.J. Filep, S. Vorobiov, V. Komanicky, T.O. Malakhovska, O.P. Kokhan, V.V. Vakulchak
Herein we present the results of the study of ceramic materials made on the basis of Ag8GeS6 powders with different dispersion. The average grain size of microcrystalline powders is 10…20 µm, and that of nanocrystalline powders is ~140 and ~180 nm, respectively. The powdered materials were investigated using the XRD and SEM methods. The Ag8GeS6-based ceramic samples were obtained by annealing (1073 K) of pressed (400 MPa) discs. Investigations of the ceramics surface by using the SEM and EDS methods indicate the homogeneity of the chemical composition of the obtained ceramics. The electrical conductivity of the obtained ceramics was studied using impedance spectroscopy in a wide frequency (1·101…3·105 Hz) and temperature (293…383 K) ranges. For all these ceramics, an increase in electrical conductivity with increasing frequency is observed. Based on the obtained results, the values of ionic conductivity and activation energy of the corresponding Ag8GeS6 ceramic samples were determined.
{"title":"Preparation and ionic conductivity of Ag8GeS6-based ceramic materials","authors":"A.I. Pogodin, M.J. Filep, S. Vorobiov, V. Komanicky, T.O. Malakhovska, O.P. Kokhan, V.V. Vakulchak","doi":"10.15407/spqeo26.03.270","DOIUrl":"https://doi.org/10.15407/spqeo26.03.270","url":null,"abstract":"Herein we present the results of the study of ceramic materials made on the basis of Ag8GeS6 powders with different dispersion. The average grain size of microcrystalline powders is 10…20 µm, and that of nanocrystalline powders is ~140 and ~180 nm, respectively. The powdered materials were investigated using the XRD and SEM methods. The Ag8GeS6-based ceramic samples were obtained by annealing (1073 K) of pressed (400 MPa) discs. Investigations of the ceramics surface by using the SEM and EDS methods indicate the homogeneity of the chemical composition of the obtained ceramics. The electrical conductivity of the obtained ceramics was studied using impedance spectroscopy in a wide frequency (1·101…3·105 Hz) and temperature (293…383 K) ranges. For all these ceramics, an increase in electrical conductivity with increasing frequency is observed. Based on the obtained results, the values of ionic conductivity and activation energy of the corresponding Ag8GeS6 ceramic samples were determined.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.
{"title":"Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review)","authors":"V.P. Melnik, V.G. Popov, B.M. Romanyuk, S.V. Antonin, A.A. Evtukh","doi":"10.15407/spqeo26.03.278","DOIUrl":"https://doi.org/10.15407/spqeo26.03.278","url":null,"abstract":"Detection of photoluminescence (PL) in traditionally non-luminescent Si material (a typical indirect band semiconductor) attracts great attention both in the scientific aspect and for applications in the field of micro- and nanoelectronics and photoelectronics. Despite the success in technology and understanding of many features inherent to its PL characteristics, many problems have not yet been resolved. In particular – what is the origin of PL lines: quantum size, molecular complexes within SiO2, interface or volume localized states, etc. How to achieve the increase in the PL intensity and to provide excitation of it in different parts of the spectrum. The proposed review systematizes results of studies associated with these problems concerning the original technologies for creation of Si nanocrystals (nc-Si) and various research methods. In conclusion, we summarize the results on the properties of nc-Si-SiO2 luminescent structures depending on their technology of synthesis, photo- and structural features and application prospects for micro- and nanoelectronics as well as photoelectronics.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M.V. Sopinskyy, K.P. Grytsenko, C. Villringer, Yu.V. Kolomzarov, S. Schrader
Ellipsometrically obtained spectral dependences of ordinary αxy and extra-ordinary αz extinction/attenuation coefficients within the spectral range λ = 300…980 nm of uniaxially anisotropic polytetrafluoroethylene (PTFE) films were analyzed. We considered the capabilities and specific features of the graphical representation technique for determining the contribution of Rayleigh scattering and Urbach absorption to light attenuation in the spectral range beyond fundamental absorption. It has been shown that the graphical approach enables to estimate these contributions qualitatively, semi-quantitatively or quantitatively, depending on the situation. The conclusions made using the analysis of graphical representation are confirmed by numerical solution of the inverse problem via simulation of the αxy (λ), αz (λ) experimental dependences within the framework of a best-fit procedure. Being based on both of these approaches, we have ascertained that, in the as-prepared PTFE films, the so-called anomalous light scattering (ALS) with the spectral dependence of scattering coefficient αs ≈ as λ–p (p > 4) takes place. Transformation of scattering from ALS to the Rayleigh one with p ≈ 4 due to annealing is accompanied by an increase of Urbach (subband) absorption. Both of these factors cause narrowing the dynamic range of extinction coefficient values. Both scattering and absorption coefficients are higher for the component of light polarized along the normal to the substrate as compared to the component polarized in parallel to it. The relationship between observed behavior of the scattering and absorption coefficients and the film structure has been discussed.
{"title":"Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem","authors":"M.V. Sopinskyy, K.P. Grytsenko, C. Villringer, Yu.V. Kolomzarov, S. Schrader","doi":"10.15407/spqeo26.03.303","DOIUrl":"https://doi.org/10.15407/spqeo26.03.303","url":null,"abstract":"Ellipsometrically obtained spectral dependences of ordinary αxy and extra-ordinary αz extinction/attenuation coefficients within the spectral range λ = 300…980 nm of uniaxially anisotropic polytetrafluoroethylene (PTFE) films were analyzed. We considered the capabilities and specific features of the graphical representation technique for determining the contribution of Rayleigh scattering and Urbach absorption to light attenuation in the spectral range beyond fundamental absorption. It has been shown that the graphical approach enables to estimate these contributions qualitatively, semi-quantitatively or quantitatively, depending on the situation. The conclusions made using the analysis of graphical representation are confirmed by numerical solution of the inverse problem via simulation of the αxy (λ), αz (λ) experimental dependences within the framework of a best-fit procedure. Being based on both of these approaches, we have ascertained that, in the as-prepared PTFE films, the so-called anomalous light scattering (ALS) with the spectral dependence of scattering coefficient αs ≈ as λ–p (p > 4) takes place. Transformation of scattering from ALS to the Rayleigh one with p ≈ 4 due to annealing is accompanied by an increase of Urbach (subband) absorption. Both of these factors cause narrowing the dynamic range of extinction coefficient values. Both scattering and absorption coefficients are higher for the component of light polarized along the normal to the substrate as compared to the component polarized in parallel to it. The relationship between observed behavior of the scattering and absorption coefficients and the film structure has been discussed.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The relationship between internal mechanical stresses, surface morphology, nanoscale electrical properties, and optical characteristics in TiO2, Gd2O3, Er2O3, and SiO2 thin films on SiC substrates was investigated. The oxide films were synthesized using the rapid thermal annealing and analyzed through scanning spreading resistance microscopy, photoluminescence, and absorption spectroscopy. Tensile stresses were found in the films, they are attributed to thermal and lattice mismatch, oxidation, and grain boundaries. These stresses influence on surface morphology, resistivity variations, and photoluminescence intensity. Surface roughness and grain structure were found to correlate with variations in resistivity, which were attributed to conductive pathways along grain boundaries and possible metallic phases. Photoluminescence intensity was also observed to correlate with estimated lattice mismatch strain. Gd2O3/SiC exhibited the fewest defects, while Er2O3 and TiO2 showed more, with Er2O3 being the most mismatched and roughest. The results indicate that internal strains in oxide thin films on SiC substrates can influence on surface morphology, leading to formation of defects and spatial inhomogeneity. These fluctuations in local conductivity and luminescence center density have significant implications for dielectric and optical applications. The study provides insights for future processing refinements to mitigate internal strains and enhance the performance of oxide thin films in semiconductor and optical technologies.
{"title":"Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC","authors":"O.B. Okhrimenko, Yu.Yu. Bacherikov, P.M. Lytvyn, O.S. Lytvyn, V.Yu. Goroneskul, R.V. Konakova","doi":"10.15407/spqeo26.03.260","DOIUrl":"https://doi.org/10.15407/spqeo26.03.260","url":null,"abstract":"The relationship between internal mechanical stresses, surface morphology, nanoscale electrical properties, and optical characteristics in TiO2, Gd2O3, Er2O3, and SiO2 thin films on SiC substrates was investigated. The oxide films were synthesized using the rapid thermal annealing and analyzed through scanning spreading resistance microscopy, photoluminescence, and absorption spectroscopy. Tensile stresses were found in the films, they are attributed to thermal and lattice mismatch, oxidation, and grain boundaries. These stresses influence on surface morphology, resistivity variations, and photoluminescence intensity. Surface roughness and grain structure were found to correlate with variations in resistivity, which were attributed to conductive pathways along grain boundaries and possible metallic phases. Photoluminescence intensity was also observed to correlate with estimated lattice mismatch strain. Gd2O3/SiC exhibited the fewest defects, while Er2O3 and TiO2 showed more, with Er2O3 being the most mismatched and roughest. The results indicate that internal strains in oxide thin films on SiC substrates can influence on surface morphology, leading to formation of defects and spatial inhomogeneity. These fluctuations in local conductivity and luminescence center density have significant implications for dielectric and optical applications. The study provides insights for future processing refinements to mitigate internal strains and enhance the performance of oxide thin films in semiconductor and optical technologies.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, we have proposed and tested a new version of an optoelectronic sensor for detecting gas molecules based on the effect of spectral surface plasmon resonance (SPR) in the chromatic mode with colorimetric registration of the R, G, B color components of reflected light. A thin 40-nm silver film on the base face of the prism with SPR excitation in the Kretschmann geometry is used as an optical sensitive element that allows us to realize a full-fledged SPR effect in the entire visible range of the spectrum from 450 to 700 nm. The physical nature of the sensory effect is a change in the refractive index of the sensitive coating on the silver film, which directly affects the SPR parameters. The films of polyvinyl formal ethylal were used as a coating selective to the number of organic analytes. A laboratory version of the portable device for implementation of a gas sensor based on the SPR-RGB effect was created. Performance of the proposed sensory method and the corresponding device were assessed using different types of alcohols as volatile organic analytes.
{"title":"SPR chromatic sensor with colorimetric registration for detection of gas molecules","authors":"O.V. Riabchenko, O.L. Kukla, O.N. Fedchenko, Yu.M. Shirshov, Z.I. Kazantseva","doi":"10.15407/spqeo26.03.343","DOIUrl":"https://doi.org/10.15407/spqeo26.03.343","url":null,"abstract":"In this work, we have proposed and tested a new version of an optoelectronic sensor for detecting gas molecules based on the effect of spectral surface plasmon resonance (SPR) in the chromatic mode with colorimetric registration of the R, G, B color components of reflected light. A thin 40-nm silver film on the base face of the prism with SPR excitation in the Kretschmann geometry is used as an optical sensitive element that allows us to realize a full-fledged SPR effect in the entire visible range of the spectrum from 450 to 700 nm. The physical nature of the sensory effect is a change in the refractive index of the sensitive coating on the silver film, which directly affects the SPR parameters. The films of polyvinyl formal ethylal were used as a coating selective to the number of organic analytes. A laboratory version of the portable device for implementation of a gas sensor based on the SPR-RGB effect was created. Performance of the proposed sensory method and the corresponding device were assessed using different types of alcohols as volatile organic analytes.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"410 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136377873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The work is devoted to investigations of possibility of rapid detection and subsequent identification of explosive substances by using the arrays of two types of sensor elements: quartz crystal microbalances and chemiresistive electrodes. Thin layers of calixarene compounds and composites of electrically conductive polymers, respectively, were used as the sensitive coatings. Several types of nitroaromatic compounds from nitrotoluene series were chosen as simulants of explosive substances: O-Nitrotoluene (2-MNT) and Nitrobenzene (MNB), the concentration of these volatile compounds varied from 10 to 100 ppm. The observed detection threshold, depending on the type of analyzed explosive simulants, was within the range of 1 to 10 ppm for quartz crystal sensors with calixarene sensitive films, and the response time was within 10…20 s for quartz crystal sensors and up to 1 min for chemiresistive sensors. It has been shown that among the tested calixarenes there are samples with high selective sensitivity. The possibility of qualitative identification of explosives at relatively low concentrations by using the statistical methods of chemical patterns recognition (the so-called “electronic nose”) has been demonstrated.
{"title":"Detection of the explosive nitroaromatic compound simulants with chemosensory systems based on quartz crystal microbalance and chemiresistive sensor arrays","authors":"Z.I. Kazantseva, I.A. Koshets, A.V. Mamykin, A.S. Pavluchenko, O.L. Kukla, A.A. Pud, N.A. Ogurtsov, Yu.V. Noskov, R.V. Rodik, S.G. Vyshnevskyy","doi":"10.15407/spqeo26.03.332","DOIUrl":"https://doi.org/10.15407/spqeo26.03.332","url":null,"abstract":"The work is devoted to investigations of possibility of rapid detection and subsequent identification of explosive substances by using the arrays of two types of sensor elements: quartz crystal microbalances and chemiresistive electrodes. Thin layers of calixarene compounds and composites of electrically conductive polymers, respectively, were used as the sensitive coatings. Several types of nitroaromatic compounds from nitrotoluene series were chosen as simulants of explosive substances: O-Nitrotoluene (2-MNT) and Nitrobenzene (MNB), the concentration of these volatile compounds varied from 10 to 100 ppm. The observed detection threshold, depending on the type of analyzed explosive simulants, was within the range of 1 to 10 ppm for quartz crystal sensors with calixarene sensitive films, and the response time was within 10…20 s for quartz crystal sensors and up to 1 min for chemiresistive sensors. It has been shown that among the tested calixarenes there are samples with high selective sensitivity. The possibility of qualitative identification of explosives at relatively low concentrations by using the statistical methods of chemical patterns recognition (the so-called “electronic nose”) has been demonstrated.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article is devoted to a theoretical evaluation of the transient behavior of a light emitting diode with a resonant cavity called the resonant cavity enhanced light emitting diode (RCELED). The used analytical model is based on applying the convolution theorem for a step input signal and the transfer function of RCELED in the presence of photon recycling. Influence of the efficiency of extraction due to photon recycling on the output optical power is analyzed. The target parameters characterizing the transient behavior are investigated. A traditional light emitting diode with no photon recycling is compared to a diode with photon recycling. The obtained results show the improvement of the output optical power and the rise time with the increase of extraction efficiency and in the presence of photon recycling in the light emitting diodes. The light emitting diode considered here reaches the highest steady state output power within 2 ns. Therefore this diode model may be used for fast speed and high optical gain applications such as in thermal imaging systems and short reach optical interconnects.
{"title":"Transient response analysis of a resonant cavity enhanced light emitting diode","authors":"Sh.M. Eladl, A. Nasr","doi":"10.15407/spqeo26.03.315","DOIUrl":"https://doi.org/10.15407/spqeo26.03.315","url":null,"abstract":"This article is devoted to a theoretical evaluation of the transient behavior of a light emitting diode with a resonant cavity called the resonant cavity enhanced light emitting diode (RCELED). The used analytical model is based on applying the convolution theorem for a step input signal and the transfer function of RCELED in the presence of photon recycling. Influence of the efficiency of extraction due to photon recycling on the output optical power is analyzed. The target parameters characterizing the transient behavior are investigated. A traditional light emitting diode with no photon recycling is compared to a diode with photon recycling. The obtained results show the improvement of the output optical power and the rise time with the increase of extraction efficiency and in the presence of photon recycling in the light emitting diodes. The light emitting diode considered here reaches the highest steady state output power within 2 ns. Therefore this diode model may be used for fast speed and high optical gain applications such as in thermal imaging systems and short reach optical interconnects.","PeriodicalId":44695,"journal":{"name":"Semiconductor Physics Quantum Electronics & Optoelectronics","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136378232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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