Role of ZnMn2O4 phase in formation of varistor characteristics in ZnO:Mn ceramics

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2023-09-20 DOI:10.15407/spqeo26.03.255
I.V. Markevich, T.R. Stara, I.P. Vorona, O.F. Isaieva, Ye.G. Gule, O.V. Melnichuk, L.Yu. Khomenkova
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Abstract

The samples ZnO:Mn were prepared using the conventional solid-state technique. To dope them with manganese, we used water solutions of MnSO4 and MnCl2. The properties inherent to both types of the obtained ceramics have been compared. It was found that the former demonstrated nonlinear current-voltage characteristics, whereas those of the latter were, in fact, linear. The analysis of EPR, diffuse reflectance and Raman spectra obtained for prepared ceramics allowed concluding that, in the samples doped with MnSO4, formation of Mn-related phase, namely, ZnMn2O4 spinel occurred at ZnO grain boundaries under sintering. It has been ascertained that a thin layer of this substance separates adjacent ZnO grains, which provides appearance of the back-to-back Schottky barriers at grain boundaries and “varistor behavior” of current-voltage characteristics.
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ZnMn2O4相在ZnO:Mn陶瓷压敏电阻特性形成中的作用
采用传统的固态法制备了ZnO:Mn样品。我们用MnSO4和MnCl2的水溶液来掺杂锰。比较了两种所得陶瓷的固有性质。结果表明,前者具有非线性的电流-电压特性,而后者具有线性的电流-电压特性。通过对制备陶瓷的EPR、漫反射和拉曼光谱的分析可知,在掺杂MnSO4的样品中,烧结过程中ZnO晶界处形成了mn相关相,即ZnMn2O4尖晶石。已经确定,该物质的薄层将相邻的ZnO晶粒分开,从而在晶界上提供背靠背的肖特基势垒和电流-电压特性的“压敏电阻行为”。
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
期刊最新文献
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