Exploring the Association Between EEG Microstates During Resting-State and Error-Related Activity in Young Children.

IF 2.3 3区 医学 Q3 CLINICAL NEUROLOGY Brain Topography Pub Date : 2024-07-01 Epub Date: 2023-12-23 DOI:10.1007/s10548-023-01030-2
Armen Bagdasarov, Kenneth Roberts, Denis Brunet, Christoph M Michel, Michael S Gaffrey
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Abstract

The error-related negativity (ERN) is a negative deflection in the electroencephalography (EEG) waveform at frontal-central scalp sites that occurs after error commission. The relationship between the ERN and broader patterns of brain activity measured across the entire scalp that support error processing during early childhood is unclear. We examined the relationship between the ERN and EEG microstates - whole-brain patterns of dynamically evolving scalp potential topographies that reflect periods of synchronized neural activity - during both a go/no-go task and resting-state in 90, 4-8-year-old children. The mean amplitude of the ERN was quantified during the -64 to 108 millisecond (ms) period of time relative to error commission, which was determined by data-driven microstate segmentation of error-related activity. We found that greater magnitude of the ERN associated with greater global explained variance (GEV; i.e., the percentage of total variance in the data explained by a given microstate) of an error-related microstate observed during the same -64 to 108 ms period (i.e., error-related microstate 3), and to greater anxiety risk as measured by parent-reported behavioral inhibition. During resting-state, six data-driven microstates were identified. Both greater magnitude of the ERN and greater GEV values of error-related microstate 3 associated with greater GEV values of resting-state microstate 4, which showed a frontal-central scalp topography. Source localization results revealed overlap between the underlying neural generators of error-related microstate 3 and resting-state microstate 4 and canonical brain networks (e.g., ventral attention) known to support the higher-order cognitive processes involved in error processing. Taken together, our results clarify how individual differences in error-related and intrinsic brain activity are related and enhance our understanding of developing brain network function and organization supporting error processing during early childhood.

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探索幼儿静息状态下的脑电图微状态与错误相关活动之间的关联。
错误相关负性(error-related negativity,ERN)是指在犯错后,额叶-中央头皮部位的脑电图(EEG)波形出现的负偏转。目前尚不清楚ERN与整个头皮测量到的支持幼儿期错误处理的更广泛的大脑活动模式之间的关系。我们研究了 90 名 4-8 岁儿童在进行 "走/不走 "任务和休息状态时,ERN 与脑电图微状态(反映同步神经活动期的动态变化头皮电位拓扑的全脑模式)之间的关系。ERN的平均振幅是在相对于错误发生的-64到108毫秒(ms)时间段内进行量化的,这是由错误相关活动的数据驱动微状态分割决定的。我们发现,在同一-64 到 108 毫秒期间观察到的与错误相关的微状态(即与错误相关的微状态 3)的全局解释方差(GEV;即特定微状态解释的数据总方差的百分比)越大,ERN 的幅度就越大,而且根据家长报告的行为抑制来衡量,焦虑风险就越大。在静息状态下,有六个数据驱动的微状态被识别出来。ERN幅度越大,与错误相关微状态3的GEV值越大,则静息状态微状态4的GEV值越大。源定位结果显示,错误相关微状态 3 和静息状态微状态 4 的潜在神经发生器与支持错误处理中涉及的高阶认知过程的典型大脑网络(如腹侧注意力)之间存在重叠。综上所述,我们的研究结果阐明了错误相关和内在大脑活动的个体差异之间的关系,并加深了我们对幼儿期支持错误处理的大脑网络功能和组织发展的理解。
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来源期刊
Brain Topography
Brain Topography 医学-临床神经学
CiteScore
4.70
自引率
7.40%
发文量
41
审稿时长
3 months
期刊介绍: Brain Topography publishes clinical and basic research on cognitive neuroscience and functional neurophysiology using the full range of imaging techniques including EEG, MEG, fMRI, TMS, diffusion imaging, spectroscopy, intracranial recordings, lesion studies, and related methods. Submissions combining multiple techniques are particularly encouraged, as well as reports of new and innovative methodologies.
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