Modeling organic negative-transconductance transistors for circuit simulation

Abstract

Organic negative-transconductance (NTC) transistors are emerging as a new versatile element of flexible and printed electronics. However, there is no standard model of these transistors available in circuit simulators. This paper introduces the first current–voltage model for organic NTC transistors. The model reflects unique structural features of a state-of-the-art NTC transistor platform, incorporating a p-type, an n-type, and a back-conduction channel into a single heterojunction architecture. The details of modeling approach and development are systematically illustrated. Then, the model is firmly validated by experimental data from a high-performance device. Finally, controllability over the abruptness of inter-regime transitions is emphasized as a key advantage of the model for the accuracy of fitting results. This compact, closed-form, and analytical model covering all regimes of operation bridges the gap between device- and circuit-level perspective of organic NTC transistors, promoting their integration into practical electronics technologies.