Post Deposition Interfacial Néel Temperature Tuning in Magnetoelectric B:Cr2O3 (Adv. Phys. Res. 1/2024)

Abstract

Antiferromagnetic Spintronics

Energy efficient and fast, non-volatile memory is the apogee of antiferromagnetic spintronics. The cover page shows a device which utilizes an antiferromagnetic, B-doped thin film of magnetoelectric Cr₂O₃. Voltage applied across the film controls its Néel vector and state variable. To facilitate high temperature operation, the Néel temperature, T_N, of B:Cr₂O₃ is tuned. In article 2300061 by Ather Mahmood, Christian Binek, and colleagues, cold neutron and x-ray photoemission (XPS) data show that annealing leads to interfacial B-accumulation and T_N increase. Neutron and XPS depth profiling map the depth dependent B-concentration.