Quantitative atomic cross section analysis by 4D-STEM and EELS

IF 2.1 3区 工程技术 Q2 MICROSCOPY Ultramicroscopy Pub Date : 2024-02-08 DOI:10.1016/j.ultramic.2024.113936
Shahar Seifer , Lothar Houben , Michael Elbaum
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Abstract

We demonstrate the use of a 4-dimensional scanning transmission electron microscope (4D-STEM) to extract atomic cross section information in amorphous materials. We measure the scattering amplitudes of 200 keV electrons in several representative specimens: amorphous carbon, silica, amorphous ice of pure water, and vitrified phosphate buffer solution. Diffraction patterns are recorded by 4D-STEM with or without energy filter at the zero-loss peak. In addition, Electron Energy Loss Spectroscopy (EELS) data are acquired at several thicknesses and energies. Mixed elastic and inelastic contributions for thick samples can be decoupled based on a convolution model. Measured differential cross sections between 1 and 3 mrad are due primarily to plasmon excitations and follow precisely a 1/θ2 angular distribution. The measured intensities match Inokuti's calculations of total dipole matrix elements for discrete dipole transitions alone, i.e., transitions to bound states of the atom and not to continuum states. We describe the fundamental mechanism of plasmon excitation in insulators as a two-step interaction process with a fast electron. First, a target electron in the specimen is excited, the probability for which follows from the availability of atomic transitions, with a strong dependence on the column of the periodic table. Second, the dielectric response of the material determines the energy loss. The energy of the loss peak depends primarily on the valence electrons. Elastic scattering is dominant at higher angles, and can be fitted conveniently to 1/θ3.7 with a linear dependence on atomic number for light atoms. In order to facilitate the interpretation of 4D STEM measurements in terms of material composition, we introduce two key parameters. Zeta is an analytical equivalent of classical STEM Z-contrast, determined by the ratio of elastic to inelastic scattering coefficients, while eta is the elastic coefficient divided by thickness. The two parameters may serve for identification of basic classes of materials in biological and other amorphous organic specimens.

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利用 4D-STEM 和 EELS 对原子截面进行定量分析
我们展示了使用四维扫描透射电子显微镜(4D-STEM)提取非晶材料原子截面信息的方法。我们测量了 200 keV 电子在几种代表性试样(无定形碳、二氧化硅、纯水无定形冰和玻璃化磷酸盐缓冲溶液)中的散射振幅。通过 4D-STEM 在零损耗峰处记录有或无能量滤波器的衍射图样。此外,还获取了几种厚度和能量下的电子能量损失谱(EELS)数据。厚样品的混合弹性和非弹性贡献可根据卷积模型进行解耦。测量到的 1 至 3 mrad 的差分截面主要由等离子激发引起,并精确遵循 1/θ2 角分布。测得的强度与 Inokuti 对离散偶极子跃迁(即原子束缚态的跃迁,而非连续态的跃迁)的总偶极子矩阵元素的计算结果相吻合。我们将绝缘体中等离子激发的基本机制描述为与快速电子的两步相互作用过程。首先,试样中的目标电子被激发,其概率取决于原子跃迁的可用性,并与周期表的列有很大关系。其次,材料的介电响应决定了能量损耗。损耗峰的能量主要取决于价电子。弹性散射在较高角度时占主导地位,可以方便地拟合为 1/θ3.7,与轻原子的原子序数呈线性关系。为了便于根据材料成分解释 4D STEM 测量结果,我们引入了两个关键参数。Zeta 是经典 STEM Z 对比度的分析等价物,由弹性散射系数与非弹性散射系数之比决定,而 eta 则是弹性系数除以厚度。这两个参数可用于识别生物和其他无定形有机标本中的基本材料类别。
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来源期刊
Ultramicroscopy
Ultramicroscopy 工程技术-显微镜技术
CiteScore
4.60
自引率
13.60%
发文量
117
审稿时长
5.3 months
期刊介绍: Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.
期刊最新文献
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