Mari Napari, Spyros Stathopoulos, Themis Prodromakis, Firman Simanjuntak
{"title":"Forming-Free and Non-linear Resistive Switching in Bilayer \\(\\hbox {HfO}_{\\textrm{x}}\\)/\\(\\hbox {TaO}_{\\textrm{x}}\\) Memory Devices by Interface-Induced Internal Resistance","authors":"Mari Napari, Spyros Stathopoulos, Themis Prodromakis, Firman Simanjuntak","doi":"10.1007/s13391-023-00481-w","DOIUrl":null,"url":null,"abstract":"<p>Resistive switching memory devices with tantalum oxide (<span>\\(\\hbox {TaO}_{\\textrm{x}}\\)</span>) and hafnium oxide (<span>\\(\\hbox {HfO}_{\\textrm{x}}\\)</span>) mono- and bilayers were fabricated using atomic layer deposition. The bilayer devices with Ti and TiN electrodes show non-linear switching characteristics, and can operate without requiring an initial electroforming step. The insertion of the <span>\\(\\hbox {HfO}_{\\textrm{x}}\\)</span> layer induces the switching behaviour on single layer <span>\\(\\hbox {TaO}_{\\textrm{x}}\\)</span> that shows Zener diode-like characteristics, with conductivity depending on the top electrode metal. The electronic conductivity mechanism study shows Schottky emission at low voltage regime followed by tunneling at higher applied bias, both indicating interface-dominated conduction. The switching mechanism study is supported by X-ray photoelectron spectroscopy characterization of the films that show a formation of <span>\\(\\hbox {TaO}_{\\textrm{x}}\\hbox {N}_{\\textrm{y}}\\)</span> and <span>\\(\\hbox {TaN}_{\\textrm{x}}\\)</span> species at the oxide-electrode interface. This interfacial layer serves as a high resistivity barrier layer enabling the homogeneous resistive switching behavior.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"363 - 371"},"PeriodicalIF":2.1000,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-023-00481-w.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00481-w","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Resistive switching memory devices with tantalum oxide (\(\hbox {TaO}_{\textrm{x}}\)) and hafnium oxide (\(\hbox {HfO}_{\textrm{x}}\)) mono- and bilayers were fabricated using atomic layer deposition. The bilayer devices with Ti and TiN electrodes show non-linear switching characteristics, and can operate without requiring an initial electroforming step. The insertion of the \(\hbox {HfO}_{\textrm{x}}\) layer induces the switching behaviour on single layer \(\hbox {TaO}_{\textrm{x}}\) that shows Zener diode-like characteristics, with conductivity depending on the top electrode metal. The electronic conductivity mechanism study shows Schottky emission at low voltage regime followed by tunneling at higher applied bias, both indicating interface-dominated conduction. The switching mechanism study is supported by X-ray photoelectron spectroscopy characterization of the films that show a formation of \(\hbox {TaO}_{\textrm{x}}\hbox {N}_{\textrm{y}}\) and \(\hbox {TaN}_{\textrm{x}}\) species at the oxide-electrode interface. This interfacial layer serves as a high resistivity barrier layer enabling the homogeneous resistive switching behavior.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.