A. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev
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引用次数: 0
Abstract
The article investigates the effect of rapid thermal annealing of ternary GaAs1–xNx/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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