Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050117

S. K. Lyubutin, V. E. Patrakov, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov

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Abstract

Voltage drop process in power Si diode switched to a conducting state by an impact-ionization wave, which is excited by overvoltage pulse with a subnanosecond rise time, has been investigated. In experiments, a reverse voltage pulse was applied to a diode with a diameter of 6 mm without preliminary reverse bias, which provided the average rate of voltage rise across the diode dU/dt in the range of 1–10 kV/ns. Numerical simulations showed that calculated and experimentally observed voltage waveforms are in good quantitative agreement in the case when an active area of the structure S_a, through which a switching current flows, increases with dU/dt value increasing. It was shown that at dU/dt < 2 kV/ns the active area tends to zero, and at dU/dt > 10 kV/ns it approaches the total area of the structure. Comparison with the results of similar studies shows that the increase in the active area of the structure with the increase in the S_a value does not depend on the material of the structure (silicon and gallium arsenide), the number of layers in the semiconductor structure (diodes and thyristors), and also on the value of the initial bias voltage.

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功率硅二极管冲击电离切换过程的空间不均匀性

摘要研究了由亚纳秒级上升时间的过压脉冲激发的冲击电离波将功率硅二极管切换到导电状态时的压降过程。在实验中，对一个直径为 6 毫米的二极管施加了一个反向电压脉冲，而没有进行初步的反向偏压，这样二极管上的平均电压上升率 dU/dt 为 1-10 kV/ns。数值模拟显示，当开关电流流经的结构有源区 Sa 随 dU/dt 值的增加而增大时，计算得出的电压波形与实验观察到的电压波形在数量上非常吻合。结果表明，在 dU/dt < 2 kV/ns 时，有功面积趋于零，而在 dU/dt > 10 kV/ns 时，有功面积接近结构的总面积。与类似研究结果的比较表明，随着 Sa 值的增加，结构有功面积的增加并不取决于结构的材料（硅和砷化镓）、半导体结构的层数（二极管和晶闸管）以及初始偏置电压的值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.