M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov
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引用次数: 0
Abstract
We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15–35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 μm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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