Studying the Effects of Prolonged Thermal Stress Aiming to Induce Artificial Aging on DRAM Retention-Based Physical Unclonable Functions

Nikolaos Athanasios Anagnostopoulos, Nico Mexis, Yufan Fan, Stephanie Senjuty Bartsch, Tanja Schaier, Stefan Katzenbeisser, T. Arul
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Abstract

This work studies the effects of thermal stress on Dynamic Random-Access Memory (DRAM) retention-based Physical Unclonable Functions (PUFs) based on Commercial Off-The-Shelf (COTS) Single-Board Computer (SBC) modules. Our results show that prolonged thermal stress, in general, leads to a decrease in the entropy of the responses of this PUF (as the number of bit flips is reduced) and a loss of its reliability (as responses taken before and after the stress has been applied to this PUF do not adequately match each other). Nevertheless, we note that as time passes after we stop applying thermal stress to the relevant PUF devices, their responses start to resemble more and more those that they produced before thermal stress was applied to them. As prolonged thermal stress has been utilised in order to induce artificial aging on electronics, our work not only studies the potential effects of aging on such electronics as DRAMs in general and DRAM PUFs in particular, but also sheds some doubt on the ability of this method to induce permanent effects that would truly resemble the effects of aging.
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研究旨在诱导人工老化的长时间热应力对基于 DRAM 保留的物理不可克隆功能的影响
这项工作研究了热应力对基于商用现货(COTS)单板计算机(SBC)模块的动态随机存取存储器(DRAM)保留型物理不可克隆函数(PUF)的影响。我们的研究结果表明,一般来说,长时间的热应力会导致该 PUF 响应的熵值下降(因为位翻转的次数减少),并降低其可靠性(因为在对该 PUF 施加压力之前和之后的响应并不完全匹配)。尽管如此,我们注意到,在停止对相关 PUF 器件施加热应力后,随着时间的推移,它们的响应开始越来越像施加热应力前的响应。我们的工作不仅研究了老化对 DRAM(尤其是 DRAM PUF)等电子器件的潜在影响,还对这种方法能否诱导出真正类似老化的永久效应提出了一些疑问。
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