Polymer Passivated All Inorganic Micro-Structured CsPbIxBry Perovskite Toward Highly Efficient Photodetectors

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-05-02 DOI:10.1002/aelm.202400042
Shruti Shah, Ashvini Punde, Dhanashri Kale, Yogesh Hase, Somnath Ladhane, Swati Rahane, Vidya Doiphode, Pratibha Shinde, Ashish Waghmare, Bharat Bade, Sachin Rondiya, Mohit Prasad, Shashikant P. Patole, Sandesh Jadkar
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Abstract

Solution-processed inorganic perovskites cause chemical and structural defects unfavorable for photodetector application. Using a binary solvent, defects in CsPbIxBry (CPIB) perovskite are passivated with poly 4-vinylpyridine (PVP) and Poly methyl methacrylate (PMMA) polymers. X-ray photoelectron spectroscopy and FTIR spectra reveal a Lewis base-acid interaction between Pb2+ and polymer, confirming the passivation of CPIB perovskite. Scanning electron microscopy analysis shows a dual-surface morphology with microribbons and microcrystals in perovskites. After PMMA treatment, CPIB perovskite exhibits a blue shift in the bandgap (1.8 to 1.95 eV), while the PVP induced a redshift, reducing the bandgap to 1.7 eV. Blue shift in PL analysis indicates modification of grain boundaries. A higher lifetime obtained for CPIB/PVP confirms the restraint of non-radiative recombinations. Photodetectors are fabricated with pristine CPIB, CPIB/PVP, and CPIB/PMMA perovskites. The passivated CPIB/PVP-based photodetector exhibits a quick rise time of ≈23 ms and a decay time of ≈17 ms. It also demonstrates a remarkable photoresponsivity of 23 mA W−1, an internal quantum efficiency of 4.9%, and a detectivity of 15.0 × 1010 Jones at 10 mW cm−2 light intensity. This approach shows the potential for environmentally stable polymers to passivate inorganic perovskites for high photodetection performance.

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聚合物钝化全无机微结构 CsPbIxBry 包晶实现高效光电探测器
溶液加工的无机包晶会产生不利于光电探测器应用的化学和结构缺陷。利用二元溶剂,用聚 4-乙烯基吡啶(PVP)和聚甲基丙烯酸甲酯(PMMA)聚合物钝化了 CsPbIxBry(CPIB)包晶石中的缺陷。X 射线光电子能谱和傅立叶变换红外光谱显示,Pb2+ 与聚合物之间存在路易斯碱-酸相互作用,从而证实了 CPIB 包晶石的钝化。扫描电子显微镜分析表明包晶具有微带和微晶的双重表面形态。经过 PMMA 处理后,CPIB 包晶带隙发生了蓝移(1.8 至 1.95 eV),而 PVP 则引起了红移,将带隙降至 1.7 eV。PL 分析中的蓝移表明晶界发生了改变。CPIB/PVP 较高的寿命证实了非辐射重组的抑制作用。利用原始 CPIB、CPIB/PVP 和 CPIB/PMMA 包晶制造了光电探测器。基于 CPIB/PVP 的钝化光电探测器显示出≈23 毫秒的快速上升时间和≈17 毫秒的衰减时间。它还具有 23 mA W-1 的出色光致发光率、4.9% 的内部量子效率以及在 10 mW cm-2 光强下 15.0 × 1010 Jones 的检测率。这种方法显示了环境稳定聚合物钝化无机包晶实现高光电探测性能的潜力。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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