Synthesis of Nd2O3/SiO2 Material Applying for the Growth of Paramignya trimera

Le Thi Hong Nhan, Nguyen Thi Lieu, Vo Thi Trong Hoa, Ngo Kim Khue, Phan Thi Dieu, Nguyễn Trí Quốc, Vo Thi Tuyet Mai, Nguyen Dinh Doc, Do Thi Diem Thuy, Cao Van Hoang
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Abstract

This study focused on synthesis of Nd2O3/SiO2 material and its applications as plant stimulant for Paramignya trimera (Oliv.) Guill. (Rutaceae). A solid-phase heating method was used to successfully synthesize Nd2O3/SiO2 material from Nd(NO3)3 and SiO2 precursors. The cultivation results indicated the potential application of the synthesized Nd2O3/SiO2 material as plant stimulants to induce root growth of Paramignya trimera as compared to the control, SiO2 and Nd2O3 exposed plants. Root length of the control, SiO­2, Nd2O3 and Nd2O3/SiO2 exposed Paramignya trimera were 12.11, 15.12, 17.56 và 26.12 cm, respectively. Silica is a nutrient that promotes growth, increases crop output by assisting in the formation and regeneration of plant cell walls. Nd2O3 increased the seedling and root growth. Combining both SiO2 and Nd2O3 exhibited synergic effects to greatly induce root growth of the Paramignya trimera. The root length of the Nd2O3/SiO2 material exposed plant were greatly higher than those of the individual material exposed plants.
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合成用于三叶伞藻生长的 Nd2O3/SiO2 材料
本研究的重点是 Nd2O3/SiO2 材料的合成及其作为 Paramignya trimera (Oliv.) Guill.(芸香科)的植物刺激剂。研究采用固相加热法成功地将 Nd(NO3)3 和 SiO2 前体合成了 Nd2O3/SiO2 材料。栽培结果表明,与对照、SiO2 和 Nd2O3 暴露植物相比,合成的 Nd2O3/SiO2 材料可用作植物刺激剂,诱导三尖杉的根系生长。对照组、SiO2、Nd2O3 和 Nd2O3/SiO2 暴露的三尖杉根长分别为 12.11 厘米、15.12 厘米、17.56 厘米和 26.12 厘米。二氧化硅是一种营养物质,能促进生长,通过帮助植物细胞壁的形成和再生来提高作物产量。Nd2O3 增加了幼苗和根系的生长。将二氧化硅和钕氧化物结合使用会产生协同效应,极大地促进三叶草的根系生长。接触 Nd2O3/SiO2 材料的植株的根长大大高于接触单独材料的植株。
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