{"title":"Design of a broadband high-efficiency power amplifier based on ring-resonant filter with compensation architecture and a series of continuous modes","authors":"Sen Xu, JianFeng Wu, Xiang Chen","doi":"10.1017/s1759078724000539","DOIUrl":null,"url":null,"abstract":"A systematic design approach is presented for the design of broadband high-efficiency power amplifiers (PAs) by combining an improved ring-resonant filter matching network with a series of continuous modes. The improved ring-resonant matching network presented can effectively enhance out-of-band attenuation and sharp roll-off characteristics by adding a compensation structure with parallel stub. To verify the proposed design theory, a 10-W GaN HEMT device is designed and fabricated. The test results indicate that from the operating frequency band of 0.55−3.3 GHz with a relative bandwidth of 142.9%, a saturated output power of 38.5−42 dBm, drain efficiency of 58.2−70.3%, and a gain of 8.5–12 dB can be achieved under 3 dB gain compression, indicating the rationality of the design theory.","PeriodicalId":49052,"journal":{"name":"International Journal of Microwave and Wireless Technologies","volume":"150 1","pages":""},"PeriodicalIF":1.4000,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Microwave and Wireless Technologies","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1017/s1759078724000539","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A systematic design approach is presented for the design of broadband high-efficiency power amplifiers (PAs) by combining an improved ring-resonant filter matching network with a series of continuous modes. The improved ring-resonant matching network presented can effectively enhance out-of-band attenuation and sharp roll-off characteristics by adding a compensation structure with parallel stub. To verify the proposed design theory, a 10-W GaN HEMT device is designed and fabricated. The test results indicate that from the operating frequency band of 0.55−3.3 GHz with a relative bandwidth of 142.9%, a saturated output power of 38.5−42 dBm, drain efficiency of 58.2−70.3%, and a gain of 8.5–12 dB can be achieved under 3 dB gain compression, indicating the rationality of the design theory.
期刊介绍:
The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.