Design of a broadband high-efficiency power amplifier based on ring-resonant filter with compensation architecture and a series of continuous modes

IF 1.4 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Microwave and Wireless Technologies Pub Date : 2024-05-30 DOI:10.1017/s1759078724000539
Sen Xu, JianFeng Wu, Xiang Chen
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Abstract

A systematic design approach is presented for the design of broadband high-efficiency power amplifiers (PAs) by combining an improved ring-resonant filter matching network with a series of continuous modes. The improved ring-resonant matching network presented can effectively enhance out-of-band attenuation and sharp roll-off characteristics by adding a compensation structure with parallel stub. To verify the proposed design theory, a 10-W GaN HEMT device is designed and fabricated. The test results indicate that from the operating frequency band of 0.55−3.3 GHz with a relative bandwidth of 142.9%, a saturated output power of 38.5−42 dBm, drain efficiency of 58.2−70.3%, and a gain of 8.5–12 dB can be achieved under 3 dB gain compression, indicating the rationality of the design theory.
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基于带补偿结构和一系列连续模式的环谐振滤波器的宽带高效功率放大器设计
通过将改进的环形谐振滤波器匹配网络与一系列连续模式相结合,提出了一种设计宽带高效功率放大器(PA)的系统设计方法。所提出的改进型环形谐振匹配网络通过添加带有并联存根的补偿结构,可有效增强带外衰减和尖锐滚降特性。为了验证所提出的设计理论,我们设计并制造了一个 10 瓦的 GaN HEMT 器件。测试结果表明,在相对带宽为 142.9% 的 0.55-3.3 GHz 工作频段内,可实现 38.5-42 dBm 的饱和输出功率、58.2-70.3% 的漏极效率以及 8.5-12 dB 的增益,增益压缩为 3 dB,这表明了设计理论的合理性。
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来源期刊
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies ENGINEERING, ELECTRICAL & ELECTRONIC-TELECOMMUNICATIONS
CiteScore
3.50
自引率
7.10%
发文量
130
审稿时长
6-12 weeks
期刊介绍: The prime objective of the International Journal of Microwave and Wireless Technologies is to enhance the communication between microwave engineers throughout the world. It is therefore interdisciplinary and application oriented, providing a platform for the microwave industry. Coverage includes: applied electromagnetic field theory (antennas, transmission lines and waveguides), components (passive structures and semiconductor device technologies), analogue and mixed-signal circuits, systems, optical-microwave interactions, electromagnetic compatibility, industrial applications, biological effects and medical applications.
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