Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

IF 38.1 1区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Nature nanotechnology Pub Date : 2024-07-02 DOI:10.1038/s41565-024-01717-y

Gabriele Pasquale, Zhe Sun, Guilherme Migliato Marega, Kenji Watanabe, Takashi Taniguchi, Andras Kis

{"title":"Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures","authors":"Gabriele Pasquale, Zhe Sun, Guilherme Migliato Marega, Kenji Watanabe, Takashi Taniguchi, Andras Kis","doi":"10.1038/s41565-024-01717-y","DOIUrl":null,"url":null,"abstract":"The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K−1 T−1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena. A highly tunable Nernst effect has been demonstrated in graphene/indium selenide devices, achieving a record Nernst coefficient at ultralow temperatures, highlighting its potential for quantum technologies and low-temperature applications.","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":null,"pages":null},"PeriodicalIF":38.1000,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41565-024-01717-y.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://www.nature.com/articles/s41565-024-01717-y","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

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Abstract

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K−1 T−1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena. A highly tunable Nernst effect has been demonstrated in graphene/indium selenide devices, achieving a record Nernst coefficient at ultralow temperatures, highlighting its potential for quantum technologies and low-temperature applications.

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二维范德瓦尔斯异质结构中的电可调巨型内斯特效应

恩斯特效应是一种横向热电现象，因其在能量转换、热电和自旋电子学方面的潜力而备受关注。然而，在低温条件下实现高性能和多功能性仍是一个难题。在这里，我们通过将石墨烯的电学特性与硒化铟的半导体特性相结合，在场效应几何结构中展示了一种大型的、电学上可调的奈恩斯特效应。我们的研究结果为探索和操纵这种热电效应建立了一个新平台，首次展示了开/关比为 103 的电可调性。此外，光电压测量显示，与单个元件相比，石墨烯/硒化铟异质结构具有更强的光-能斯特信号。值得注意的是，我们观察到在超低温和低磁场条件下，石墨烯/硒化铟异质结构的能斯特系数达到了创纪录的 66.4 μV K-1 T-1，这是向量子信息和低温突发现象应用迈出的重要一步。

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来源期刊

Nature nanotechnology 工程技术-材料科学：综合

CiteScore

59.70

自引率

0.80%

发文量

196

审稿时长

4-8 weeks

期刊介绍： Nature Nanotechnology is a prestigious journal that publishes high-quality papers in various areas of nanoscience and nanotechnology. The journal focuses on the design, characterization, and production of structures, devices, and systems that manipulate and control materials at atomic, molecular, and macromolecular scales. It encompasses both bottom-up and top-down approaches, as well as their combinations. Furthermore, Nature Nanotechnology fosters the exchange of ideas among researchers from diverse disciplines such as chemistry, physics, material science, biomedical research, engineering, and more. It promotes collaboration at the forefront of this multidisciplinary field. The journal covers a wide range of topics, from fundamental research in physics, chemistry, and biology, including computational work and simulations, to the development of innovative devices and technologies for various industrial sectors such as information technology, medicine, manufacturing, high-performance materials, energy, and environmental technologies. It includes coverage of organic, inorganic, and hybrid materials.